US PATENT SUBCLASS 327 / 574
.~ Utilizing a three or more electrode solid-state device

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

524  DF  SPECIFIC IDENTIFIABLE DEVICE, CIRCUIT, OR SYSTEM {22}
574.~ Utilizing a three or more electrode solid-state device {8}
575  DF  .~.~> Darlington connection
576  DF  .~.~> Complementary transistors
577  DF  .~.~> Multiple emitter transistor
578  DF  .~.~> Multiple collector transistor
579  DF  .~.~> Minority carrier storage
580  DF  .~.~> Transistor breakdown device (e.g., avalanche, zener, punch through, etc.)
581  DF  .~.~> Field-effect transistor
582  DF  .~.~> Four or more layer device (e.g., silicon-controlled rectifier, etc.)

DEFINITION

Classification: 327/574

Utilizing a three or more electrode solid-state device:

(under subclass 524) Subject matter wherein the nonlinear circuit includes at least one solid-state device with more than two electrodes having a particularly described feature.

SEE OR SEARCH CLASS

257, Active Solid-State Device (e.g., Transistors, Solid-State Diodes), appropriate subclass for transistors or solid-state devices, per se.