US PATENT SUBCLASS 327 / 577
.~.~ Multiple emitter transistor

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

524  DF  SPECIFIC IDENTIFIABLE DEVICE, CIRCUIT, OR SYSTEM {22}
574  DF  .~ Utilizing a three or more electrode solid-state device {8}
577.~.~ Multiple emitter transistor

DEFINITION

Classification: 327/577

Multiple emitter transistor:

(under subclass 574) Subject matter wherein a circuit includes a three or more electrode solid-state device which is a junction type bipolar transistor having at least two emitter regions in addition to the base and collector regions.