US PATENT SUBCLASS 327 / 580
.~.~ Transistor breakdown device (e.g., avalanche, zener, punch through, etc.)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

524  DF  SPECIFIC IDENTIFIABLE DEVICE, CIRCUIT, OR SYSTEM {22}
574  DF  .~ Utilizing a three or more electrode solid-state device {8}
580.~.~ Transistor breakdown device (e.g., avalanche, zener, punch through, etc.)

DEFINITION

Classification: 327/580

Transistor breakdown device (e.g., avalanche, zener, punch through, etc.):

(under subclass 574) Subject matter including a transistor having a threshold voltage above which the applied voltage must rise before a junction breakdown occurs allowing a current to flow across the transistor junction.