US PATENT SUBCLASS 327 / 326
.~.~.~.~ Avalanche or negative resistance device (e.g., zener diode, tunnel diode, etc.)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

100  DF  SIGNAL CONVERTING, SHAPING, OR GENERATING {29}
306  DF  .~ Amplitude control {5}
309  DF  .~.~ By limiting, clipping, or clamping {10}
325  DF  .~.~.~ Using only diode active elements {1}
326.~.~.~.~ Avalanche or negative resistance device (e.g., zener diode, tunnel diode, etc.)

DEFINITION

Classification: 327/326

Avalanche or negative resistance device (e.g., zener diode, tunnel diode, etc.):

(under subclass 325) Subject matter wherein at least one of the diode elements exhibits a sharp increase of current flow with increasing reverse bias applied thereto or has an IV characteristic with a portion where an increase in applied voltage results in a decrease of current therethrough.

SEE OR SEARCH THIS CLASS, SUBCLASS:

310+, for negative resistance device limiting, clipping, or clamping which reduce transient noise signals.

SEE OR SEARCH CLASS

257, Active Solid-State Devices (e.g., Transistor, Solid-State Diodes), appropriate subclasses for solid-state devices, per se, and particularly

603+, for avalanche diodes, per se.