US PATENT SUBCLASS 327 / 453
.~.~.~.~ Silicon controlled rectifier (SCR)

Current as of: June, 1999
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327 /   HD   MISCELLANEOUS ACTIVE ELECTRICAL NONLINEAR DEVICES, CIRCUITS, AND SYSTEMS

365  DF  GATING (I.E., SWITCHING INPUT TO OUTPUT) {12}
419  DF  .~ Utilizing three or more electrode solid-state device {7}
438  DF  .~.~ Four or more layer device (e.g., thyristor, etc.) {6}
447  DF  .~.~.~ AC supply {6}
453.~.~.~.~ Silicon controlled rectifier (SCR) {4}
454  DF  .~.~.~.~.~> With unijunction transistor
455  DF  .~.~.~.~.~> Triac {4}
460  DF  .~.~.~.~.~> Plural SCR's {1}
463  DF  .~.~.~.~.~> With bipolar transistor

DEFINITION

Classification: 327/453

Silicon controlled rectifier (SCR):

(under subclass 447) Subject matter including a four layer, three junction device, which can be triggered into conduction in only one direction.

(1) Note. The formal name of an SCR is a "reverse-blocking triode thyristor".

(2) Note. The three SCR terminals are called anode, cathode, and gate.