| | CLASS NOTES |
| 1 | DF | BULK EFFECT DEVICE {2} |
| 9 | DF | THIN ACTIVE PHYSICAL LAYER WHICH IS (1) AN ACTIVE POTENTIAL WELL LAYER THIN ENOUGH TO ESTABLISH DISCRETE QUANTUM ENERGY LEVELS OR (2) AN ACTIVE BARRIER LAYER THIN ENOUGH TO PERMIT QUANTUM MECHANICAL TUNNELING OR (3) AN ACTIVE LAYER THIN ENOUGH TO PERMIT CARRIER TRANSMISSION WITH SUBSTANTIALLY NO SCATTERING (E.G., SUPERLATTICE, QUANTUM WELL, OR BALLISTIC TRANSPORT DEVICE) {5} |
| 40 | DF | ORGANIC SEMICONDUCTOR MATERIAL |
| 41 | DF | POINT CONTACT DEVICE |
| 42 | DF | SEMICONDUCTOR IS SELENIUM OR TELLURIUM IN ELEMENTAL FORM |
| 43 | DF | SEMICONDUCTOR IS AN OXIDE OF A METAL (E.G., CuO, ZnO) OR COPPER SULFIDE |
| 44 | DF | WITH METAL CONTACT ALLOYED TO ELEMENTAL SEMICONDUCTOR TYPE PN JUNCTION IN NONREGENERATIVE STRUCTURE {3} |
| 48 | DF | TEST OR CALIBRATION STRUCTURE |
| 49 | DF | NON-SINGLE CRYSTAL, OR RECRYSTALLIZED, SEMICONDUCTOR MATERIAL FORMS PART OF ACTIVE JUNCTION (INCLUDING FIELD-INDUCED ACTIVE JUNCTION) {9} |
| 76 | DF | SPECIFIED WIDE BAND GAP (> 1.5eV) SEMICONDUCTOR MATERIAL OTHER THAN GaAsP OR GaAlAs {2} |
| 79 | DF | INCOHERENT LIGHT EMITTER STRUCTURE {10} |
| 104 | DF | TUNNELING PN JUNCTION (E.G., ESAKI DIODE) DEVICE {2} |
| 107 | DF | REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19} |
| 183 | DF | HETEROJUNCTION DEVICE {10} |
| 202 | DF | GATE ARRAYS {4} |
| 212 | DF | CONDUCTIVITY MODULATION DEVICE (E.G., UNIJUNCTION TRANSISTOR, DOUBLE-BASE DIODE, CONDUCTIVITY-MODULATED TRANSISTOR) |
| 213 | DF | FIELD EFFECT DEVICE {6} |
| 414 | DF | RESPONSIVE TO NON-ELECTRICAL SIGNAL (E.G., CHEMICAL, STRESS, LIGHT, OR MAGNETIC FIELD SENSORS) {4} |
| 471 | DF | SCHOTTKY BARRIER {8} |
| 487 | DF | WITH MEANS TO INCREASE BREAKDOWN VOLTAGE THRESHOLD {6} |
| 497 | DF | PUNCHTHROUGH STRUCTURE DEVICE (E.G., PUNCHTHROUGH TRANSISTOR, CAMEL BARRIER DIODE) {1} |
| 499 | DF | INTEGRATED CIRCUIT STRUCTURE WITH ELECTRICALLY ISOLATED COMPONENTS {9} |
| 565 | DF | BIPOLAR TRANSISTOR STRUCTURE {11} |
| 594 | DF | WITH GROOVE TO DEFINE PLURAL DIODES |
| 595 | DF | VOLTAGE VARIABLE CAPACITANCE DEVICE {6} |
| 603 | DF | AVALANCHE DIODE (E.G., SO-CALLED "ZENER" DIODE HAVING BREAKDOWN VOLTAGE GREATER THAN 6 VOLTS) {2} |
| 607 | DF | WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION) {3} |
| 613 | DF | INCLUDING SEMICONDUCTOR MATERIAL OTHER THAN SILICON OR GALLIUM ARSENIDE (GaAs) (E.G., PbxSn1-xTe) {3} |
| 617 | DF | INCLUDING REGION CONTAINING CRYSTAL DAMAGE |
| 618 | DF | PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.) {6} |
| 629 | DF | WITH MEANS TO CONTROL SURFACE EFFECTS {4} |
| 653 | DF | WITH SPECIFIED SHAPE OF PN JUNCTION {1} |
| 655 | DF | WITH SPECIFIED IMPURITY CONCENTRATION GRADIENT {2} |
| 658 | DF | PLATE TYPE RECTIFIER ARRAY |
| 659 | DF | WITH SHIELDING (E.G., ELECTRICAL OR MAGNETIC SHIELDING, OR FROM ELECTROMAGNETIC RADIATION OR CHARGE PARTICLES) {1} |
| 661 | DF | SUPERCONDUCTIVE CONTACT OR LEAD {2} |
| 664 | DF | TRANSMISSION LINE LEAD (E.G., STRIPLINE, COAX, ETC.) |
| 665 | DF | CONTACTS OR LEADS INCLUDING FUSIBLE LINK MEANS OR NOISE SUPPRESSION MEANS |
| 666 | DF | LEAD FRAME {10} |
| 678 | DF | HOUSING OR PACKAGE {18} |
| 734 | DF | COMBINED WITH ELECTRICAL CONTACT OR LEAD {14} |
| 787 | DF | ENCAPSULATED {3} |
| 797 | DF | ALIGNMENT MARKS |
| 798 | DF | MISCELLANEOUS |
| | ****************************** |
| | CROSS-REFERENCE ART COLLECTIONS |
| | ****************************** |
| 900 | DF | MOSFET TYPE GATE SIDEWALL INSULATING SPACER |
| 901 | DF | MOSFET SUBSTRATE BIAS |
| 902 | DF | FET WITH METAL SOURCE REGION |
| 903 | DF | FET CONFIGURATION ADAPTED FOR USE AS STATIC MEMORY CELL {1} |
| 905 | DF | PLURAL DRAM CELLS SHARE COMMON CONTACT OR COMMON TRENCH |
| 906 | DF | DRAM WITH CAPACITOR ELECTRODES USED FOR ACCESSING (E.G., BIT LINE IS CAPACITOR PLATE) |
| 907 | DF | FOLDED BIT LINE DRAM CONFIGURATION |
| 908 | DF | DRAM CONFIGURATION WITH TRANSISTORS AND CAPACITORS OF PAIRS OF CELLS ALONG A STRAIGHT LINE BETWEEN ADJACENT BIT LINES |
| 909 | DF | MACROCELL ARRAYS (E.G., GATE ARRAYS WITH VARIABLE SIZE OR CONFIGURATION OF CELLS) |
| 910 | DF | DIODE ARRAYS (E.G., DIODE READ-ONLY MEMORY ARRAY) |
| 911 | DF | LIGHT SENSITIVE ARRAY ADAPTED TO BE SCANNED BY ELECTRON BEAM (E.G., VIDICON DEVICE) |
| 912 | DF | CHARGE TRANSFER DEVICE USING BOTH ELECTRON AND HOLE SIGNAL CARRIERS |
| 913 | DF | WITH MEANS TO ABSORB OR LOCALIZE UNWANTED IMPURITIES OR DEFECTS FROM SEMICONDUCTORS (E.G., HEAVY METAL GETTERING) |
| 914 | DF | POLYSILICON CONTAINING OXYGEN, NITROGEN, OR CARBON (E.G., SIPOS) |
| 915 | DF | WITH TITANIUM NITRIDE PORTION OR REGION |
| 916 | DF | NARROW BAND GAP SEMICONDUCTOR MATERIAL (<< 1eV) |
| 917 | DF | PLURAL DOPANTS OF SAME CONDUCTIVITY TYPE IN SAME REGION |
| 918 | DF | LIGHT EMITTING REGENERATIVE SWITCHING DEVICE (E.G., LIGHT EMITTING SCR) ARRAYS, CIRCUITRY, ETC. |
| 919 | DF | ELEMENTS OF SIMILAR CONSTRUCTION CONNECTED IN SERIES OR PARALLEL TO AVERAGE OUT MANUFACTURING VARIATIONS IN CHARACTERISTICS |
| 920 | DF | CONDUCTOR LAYERS ON DIFFERENT LEVELS CONNECTED IN PARALLEL (E.G., TO REDUCE RESISTANCE) |
| 921 | DF | RADIATION HARDENED SEMICONDUCTOR DEVICE |
| 922 | DF | WITH MEANS TO PREVENT INSPECTION OF OR TAMPERING WITH AN INTEGRATED CIRCUIT (E.G., "SMART CARD" ANTI-TAMPER) |
| 923 | DF | WITH MEANS TO OPTIMIZE ELECTRICAL CONDUCTOR CURRENT CARRYING CAPACITY (E.G., PARTICULAR CONDUCTOR ASPECT RATIO) |
| 924 | DF | WITH PASSIVE DEVICE (E.G., CAPACITOR), OR BATTERY AS INTEGRAL PART OF HOUSING OR HOUSING ELEMENT (E.G., CAP) |
| 925 | DF | BRIDGE RECTIFIER MODULE |
| 926 | DF | ELONGATED LEAD EXTENDING AXIALLY THROUGH ANOTHER ELONGATED LEAD |
| 927 | DF | DIFFERENT DOPING LEVELS IN DIFFERENT PARTS OF PN JUNCTION TO PRODUCE SHAPED DEPLETION LAYER |
| 928 | DF | WITH SHORTED PN OR SCHOTTKY JUNCTION OTHER THAN EMITTER JUNCTION |
| 929 | DF | PN JUNCTION ISOLATED INTEGRATED CIRCUIT WITH ISOLATION WALLS HAVING MINIMUM DOPANT CONCENTRATION AT INTERMEDIATE DEPTH IN EPITAXIAL LAYER (E.G., DIFFUSED FROM BOTH SURFACES OF EPITAXIAL LAYER) |
| 930 | DF | THERMOELECTRIC (E.G., PELTIER EFFECT) COOLING |
