US PATENT SUBCLASS 257 / 903
FET CONFIGURATION ADAPTED FOR USE AS STATIC MEMORY CELL

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

903FET CONFIGURATION ADAPTED FOR USE AS STATIC MEMORY CELL {1}
904  DF  .~> With passive components (e.g., polysilicon resistors)

DEFINITION

Classification: 257/903

FET CONFIGURATION ADAPTED FOR USE AS STATIC MEMORY CELL:

Subject matter wherein a field effect transistor is structurally arranged to be used in a static memory element (i.e., one in which information need not be periodically refreshed).