US PATENT SUBCLASS 257 / 607
WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

607WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION) {3}
608  DF  .~> Switching device based on filling and emptying of deep energy levels
609  DF  .~> For compound semiconductor (e.g., deep level dopant)
610  DF  .~> Deep level dopant {2}

DEFINITION

Classification: 257/607

WITH SPECIFIED DOPANT (e.g., plural dopants of same conductivity in same region):

(under the class definition) Subject matter wherein the active solid-state device contains impurity dopant atoms which are specified and are used to change the conductive properties of the semiconductor material.

(1) Note. If the dopant is in Si or Ge, it may be a shallow level dopant, other than an element from group III or group V of the periodic table (e.g., a dopant such as Li in Ge).