US PATENT SUBCLASS 257 / 608
.~ Switching device based on filling and emptying of deep energy levels

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

607  DF  WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION) {3}
608.~ Switching device based on filling and emptying of deep energy levels

DEFINITION

Classification: 257/608

Switching device based on filling and emptying of deep energy levels:

(under subclass 607) Subject matter wherein the device utilizes charge carrier filling and emptying of deep energy levels within the forbidden gap of semiconductor material of the device to produce a switching or ON/OFF action.