US PATENT SUBCLASS 257 / 609
.~ For compound semiconductor (e.g., deep level dopant)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

607  DF  WITH SPECIFIED DOPANT (E.G., PLURAL DOPANTS OF SAME CONDUCTIVITY IN SAME REGION) {3}
609.~ For compound semiconductor (e.g., deep level dopant)

DEFINITION

Classification: 257/609

For compound semiconductor (e.g., deep level dopant):

(under subclass 607) Subject matter wherein the specified dopant is in a compound semiconductor (e.g., GaAs).