US PATENT SUBCLASS 257 / 107
REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
108  DF  .~> Controlled by nonelectrical, nonoptical external signal (e.g., magnetic field, pressure, thermal)
109  DF  .~> Having only two terminals and no control electrode (gate) (e.g., Shockley diode) {3}
113  DF  .~> With light activation {4}
119  DF  .~> Bidirectional rectifier with control electrode (gate) (e.g., Triac) {9}
132  DF  .~> Five or more layer unidirectional structure
133  DF  .~> Combined with field effect transistor {3}
146  DF  .~> Combined with other solid state active device in integrated structure
147  DF  .~> With extended latchup current level (e.g., gate turn off "GTO" device) {5}
154  DF  .~> With resistive region connecting separate sections of device
155  DF  .~> With switching speed enhancement means (e.g., Schottky contact) {1}
157  DF  .~> With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) {4}
162  DF  .~> Lateral structure
163  DF  .~> Emitter region feature {1}
167  DF  .~> Having at least four external electrodes
168  DF  .~> With means to increase breakdown voltage {2}
172  DF  .~> With means to lower "ON" voltage drop
173  DF  .~> Device protection (e.g., from overvoltage) {1}
175  DF  .~> With means to control triggering (e.g., gate electrode configuration, zener diode firing, dV/dt control, transient control by ferrite bead, etc.) {1}
177  DF  .~> With housing or external electrode {3}

DEFINITION

Classification: 257/107

REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR):

(under the class definition) Subject matter wherein the active solid-state device acts as if it has two or more active emitter junctions each of which is associated with a separate, equivalent transistor having an individual gain and, when initiated by a base region current, the equivalent transistors mutually drive each other in a regenerative manner to lower the voltage drop between the emitters.

(1) Note. If the current is above a level IH, called the "holding current", then the device will remain ON when the triggering signal is removed by the regenerative feedback therebetween, and is then said to be "latched".

SEE OR SEARCH CLASS

123, Internal-Combustion Engines,

648, for circuits employing silicon controlled rectifiers (SCRs).

327, Miscellaneous Active Electrical Nonlinear Devices, Circuits, and Systems,

199+, for a bistable circuit which includes diverse solid-state devices such as an SCR, subclasses 392+ for a delay controlled switch which may include an SCR, and subclasses 438+ for gating circuits which may use a thyristor or SCR. 361, Electricity: Electrical Systems and Devices,

100+, and 205 for circuits employing thyristors (e.g., silicon controlled rectifiers (SCRs)).

363, Electric Power Conversion Systems,

27+, 54, 57+, 68, 85+, 96+, 128+, 135+, and 160+ for circuits employing thyristors (e.g., silicon controlled rectifiers (SCRs)).

388, Electricity: Motor Control Systems,

917+, for circuits employing thyristors (e.g., silicon controlled rectifiers (SCRs)).

438, Semiconductor Device Manufacturing: Process, particularly

133+, for methods of forming a regenerative type switching device.