US PATENT SUBCLASS 257 / 175
.~ With means to control triggering (e.g., gate electrode configuration, zener diode firing, dV/dt control, transient control by ferrite bead, etc.)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
175.~ With means to control triggering (e.g., gate electrode configuration, zener diode firing, dV/dt control, transient control by ferrite bead, etc.) {1}
176  DF  .~.~> Located in an emitter-gate region

DEFINITION

Classification: 257/175

With means to control triggering (e.g., gate electrode configuration, Zener diode firing, dV/Dt control, transient control by ferrite bead, etc.):

(under subclass 107) Subject matter wherein the regenerative active junction type switching device includes means for controlling device turn-on.

(1) Note. Transient electrical phenomena, e.g., damped oscillations or surges in operation current or voltage following a sudden change in the applied voltage or current to the device, may be controlled, for example, by use of ferrite bead or capacitive input means.