US PATENT SUBCLASS 257 / 176
.~.~ Located in an emitter-gate region

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
175  DF  .~ With means to control triggering (e.g., gate electrode configuration, zener diode firing, dV/dt control, transient control by ferrite bead, etc.) {1}
176.~.~ Located in an emitter-gate region

DEFINITION

Classification: 257/176

Located in an emitter-gate region:

(under subclass 175) Subject matter wherein the signal control mechanism is a transistor emitter junction with the gate region, and is used as the gate input.