257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
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107 | DF | REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19} |
119 | | .~ Bidirectional rectifier with control electrode (gate) (e.g., Triac) {9} |
120 | DF | .~.~> Six or more semiconductor layers of alternating conductivity types (e.g., npnpnpn structure) |
121 | DF | .~.~> With diode or transistor in reverse path |
122 | DF | .~.~> Lateral |
123 | DF | .~.~> With trigger signal amplification (e.g., amplified gate) |
124 | DF | .~.~> Combined with field effect transistor structure {1} |
126 | DF | .~.~> With means to separate a device into sections having different conductive polarity {1} |
128 | DF | .~.~> Having overlapping sections of different conductive polarity |
129 | DF | .~.~> With means to increase reverse breakdown voltage |
130 | DF | .~.~> Switching speed enhancement means {1} |