US PATENT SUBCLASS 257 / 130
.~.~ Switching speed enhancement means

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
119  DF  .~ Bidirectional rectifier with control electrode (gate) (e.g., Triac) {9}
130.~.~ Switching speed enhancement means {1}
131  DF  .~.~.~> Recombination centers or deep level dopants

DEFINITION

Classification: 257/130

Switching speed enhancement means:

(under subclass 119) Subject matter wherein the bidirectional rectifier with control electrode includes or is combined with means to increase the speed at which the device switches.