US PATENT SUBCLASS 257 / 131
.~.~.~ Recombination centers or deep level dopants

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
119  DF  .~ Bidirectional rectifier with control electrode (gate) (e.g., Triac) {9}
130  DF  .~.~ Switching speed enhancement means {1}
131.~.~.~ Recombination centers or deep level dopants

DEFINITION

Classification: 257/131

Recombination centers or deep level dopants:

(under subclass 130) Subject matter wherein the switching speed enhancement means include (1) centers wherein excess holes and electrons recombine and are removed as charge carriers in the device or (2) dopant ions with energy levels that are located in the forbidden band of the active semiconductor material of the device.