US PATENT SUBCLASS 257 / 124
.~.~ Combined with field effect transistor structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
119  DF  .~ Bidirectional rectifier with control electrode (gate) (e.g., Triac) {9}
124.~.~ Combined with field effect transistor structure {1}
125  DF  .~.~.~> Controllable emitter shunting

DEFINITION

Classification: 257/124

Combined with field effect transistor structure:

(under subclass 119) Subject matter wherein the bidirectional rectifier with control electrode includes or is combined with a field effect transistor structure, i.e., a transistor in which the current through a conducting channel is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof.

(1) Note. See illustration under subclass 213 for various field effect devices.