US PATENT SUBCLASS 257 / 125
.~.~.~ Controllable emitter shunting

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
119  DF  .~ Bidirectional rectifier with control electrode (gate) (e.g., Triac) {9}
124  DF  .~.~ Combined with field effect transistor structure {1}
125.~.~.~ Controllable emitter shunting

DEFINITION

Classification: 257/125

Controllable emitter shunting:

(under subclass 124) Subject matter wherein the field effect transistor structure is connected to shunt one of the emitter-base junctions of the regenerative structure under control of the voltage applied to the gate of the field effect transistor.