US PATENT SUBCLASS 257 / 120
.~.~ Six or more semiconductor layers of alternating conductivity types (e.g., npnpnpn structure)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
119  DF  .~ Bidirectional rectifier with control electrode (gate) (e.g., Triac) {9}
120.~.~ Six or more semiconductor layers of alternating conductivity types (e.g., npnpnpn structure)

DEFINITION

Classification: 257/120

Six or more semiconductor layers of alternating conductivity types (e.g., npnpnpn structure):

(under subclass 119) Subject matter wherein the bidirectional rectifier with control electrode contains six or more layers of semiconductor material, each of which has a different conductivity type, (e.g., n-type or p-type) which differs from that of each adjacent layer.