US PATENT SUBCLASS 257 / 177
.~ With housing or external electrode

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
177.~ With housing or external electrode {3}
178  DF  .~.~> With means to avoid stress between electrode and active device (e.g., thermal expansion matching of electrode to semiconductor) {1}
180  DF  .~.~> Stud mount
181  DF  .~.~> With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element (e.g., ring) {1}

DEFINITION

Classification: 257/177

With housing or external electrode:

(under subclass 107) Subject matter wherein the regenerative

active junction type switching device includes a structure in which to place the device.

SEE OR SEARCH THIS CLASS, SUBCLASS:

81, and 82, for a light emitting device in combination with or constituting a light responsive device, with specific housing structure.

99, for light emitting device with specific housing structure.

433, and 434, for light responsive device with housing or encapsulation means.

573, for Darlington configuration bipolar transistor structure with housing or contact structure.

584, for enlarged emitter device bipolar transistor means having housing or contact. 602, for a voltage variable capacitance device with specified housing or contact.

660, for means to shield a device contained in a housing.