US PATENT SUBCLASS 257 / 181
.~.~ With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element (e.g., ring)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
177  DF  .~ With housing or external electrode {3}
181.~.~ With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element (e.g., ring) {1}
182  DF  .~.~.~> With lead feedthrough means on side of housing

DEFINITION

Classification: 257/181

With large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element, (e.g., ring):

(under subclass 177) Subject matter wherein the housing is provided with large area flexible electrodes in press contact with opposite sides of active semiconductor chip and surrounded by an insulating element (e.g., ring).