US PATENT SUBCLASS 257 / 133
.~ Combined with field effect transistor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
133.~ Combined with field effect transistor {3}
134  DF  .~.~> J-FET (junction field effect transistor) {1}
137  DF  .~.~> Having controllable emitter shunt {1}
139  DF  .~.~> With extended latchup current level (e.g., COMFET device) {6}

DEFINITION

Classification: 257/133

Combined with field effect transistor:

(under subclass 107) Subject matter wherein the regenerative device includes or is combined with a field effect transistor, i.e., a transistor in which the current through a conducting channel is controlled by an electric field coming from a voltage which is applied between the gate and source terminals thereof.