US PATENT SUBCLASS 257 / 134
.~.~ J-FET (junction field effect transistor)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
133  DF  .~ Combined with field effect transistor {3}
134.~.~ J-FET (junction field effect transistor) {1}
135  DF  .~.~.~> Vertical (i.e., where the source is located above the drain or vice versa) {1}

DEFINITION

Classification: 257/134

J-FET (junction field effect transistor):

(under subclass 133) Subject matter wherein the field effect transistor combined with the regenerative action junction type switching device is a junction field effect transistor, i.e., a field effect transistor wherein the gate region is isolated from the conducting channel by a rectifying pn junction or Schottky barrier junction.

SEE OR SEARCH THIS CLASS, SUBCLASS:

287, for power JFET devices.

504, for JFET type isolation.