US PATENT SUBCLASS 257 / 135
.~.~.~ Vertical (i.e., where the source is located above the drain or vice versa)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
133  DF  .~ Combined with field effect transistor {3}
134  DF  .~.~ J-FET (junction field effect transistor) {1}
135.~.~.~ Vertical (i.e., where the source is located above the drain or vice versa) {1}
136  DF  .~.~.~.~> Enhancement mode (e.g., so-called SITs)

DEFINITION

Classification: 257/135

Vertical (i.e., where the source is located above the drain or vice versa):

(under subclass 134) Subject matter wherein the operating current path of the JFET is perpendicular to the plane of its main surface.