US PATENT SUBCLASS 257 / 136
.~.~.~.~ Enhancement mode (e.g., so-called SITs)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
133  DF  .~ Combined with field effect transistor {3}
134  DF  .~.~ J-FET (junction field effect transistor) {1}
135  DF  .~.~.~ Vertical (i.e., where the source is located above the drain or vice versa) {1}
136.~.~.~.~ Enhancement mode (e.g., so-called SITs)

DEFINITION

Classification: 257/136

Enhancement mode (e.g., so-called SITs):

(under subclass 135) Subject matter in which no current flows except for leakage current, when the gate to source voltage is zero.

(1) Note. Conduction does not begin until the gate voltage reaches a finite threshold value.

(2) Note. Compare this with depletion mode J-FETS in which maximum current is passed by the transistor at a zero gate potential and current decreases as the gate voltage increases.