US PATENT SUBCLASS 257 / 139
.~.~ With extended latchup current level (e.g., COMFET device)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
133  DF  .~ Combined with field effect transistor {3}
139.~.~ With extended latchup current level (e.g., COMFET device) {6}
140  DF  .~.~.~> Combined with other solid state active device in integrated structure
141  DF  .~.~.~> Lateral structure, i.e., current flow parallel to main device surface
142  DF  .~.~.~> Having impurity doping for gain reduction
143  DF  .~.~.~> Having anode shunt means
144  DF  .~.~.~> Cathode emitter or cathode electrode feature
145  DF  .~.~.~> Low impedance channel contact extends below surface

DEFINITION

Classification: 257/139

With extended latchup current level (e.g., COMFET device):

(under subclass 133) Subject matter wherein the regenerative active junction type switching device (e.g., a conductivity

modulated FET) includes means to provide regenerative action without latchup over an extended current range of the device (i.e., by increasing IH).