US PATENT SUBCLASS 257 / 140
.~.~.~ Combined with other solid state active device in integrated structure

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
133  DF  .~ Combined with field effect transistor {3}
139  DF  .~.~ With extended latchup current level (e.g., COMFET device) {6}
140.~.~.~ Combined with other solid state active device in integrated structure

DEFINITION

Classification: 257/140

Combined with other solid-state active device in integrated structure:

(under subclass 139) Subject matter wherein the extended latchup current level device is combined with another solid-state active device in a monolithic single crystal chip structure.