US PATENT SUBCLASS 257 / 142
.~.~.~ Having impurity doping for gain reduction

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
133  DF  .~ Combined with field effect transistor {3}
139  DF  .~.~ With extended latchup current level (e.g., COMFET device) {6}
142.~.~.~ Having impurity doping for gain reduction

DEFINITION

Classification: 257/142

Having impurity doping for gain reduction:

(under subclass 139) Subject matter wherein the extended latchup current level device has impurity dopant to reduce device regenerative gain, i.e., the gain or amplification of one or more of the active junction portions connected in regenerative fashion.