US PATENT SUBCLASS 257 / 145
.~.~.~ Low impedance channel contact extends below surface

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
133  DF  .~ Combined with field effect transistor {3}
139  DF  .~.~ With extended latchup current level (e.g., COMFET device) {6}
145.~.~.~ Low impedance channel contact extends below surface

DEFINITION

Classification: 257/145

Low impedance channel contact extends below surface:

(under subclass 139) Subject matter wherein the extended latchup current level device has an electrical contact extending from the device surface into the body of the device which is connected to the channel of the field effect transistor portion and wherein the contact has a relatively low electrical impedance.