US PATENT SUBCLASS 257 / 137
.~.~ Having controllable emitter shunt

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
133  DF  .~ Combined with field effect transistor {3}
137.~.~ Having controllable emitter shunt {1}
138  DF  .~.~.~> Having gate turn off (GTO) feature

DEFINITION

Classification: 257/137

Having controllable emitter shunt:

(under subclass 133) Subject matter wherein the regenerative switching device is combined with a junction field effect transistor that is connected across an emitter-base junction of the regenerative device to controllably divert current from the emitter-base junction.