257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
107 | DF | REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19} |
109 | .~ Having only two terminals and no control electrode (gate) (e.g., Shockley diode) {3} | |
110 | DF | .~.~> More than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.) |
111 | DF | .~.~> Triggered by VBO overvoltage means |
112 | DF | .~.~> With highly-doped breakdown diode trigger |