US PATENT SUBCLASS 257 / 110
.~.~ More than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
109  DF  .~ Having only two terminals and no control electrode (gate) (e.g., Shockley diode) {3}
110.~.~ More than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.)

DEFINITION

Classification: 257/110

More than four semiconductor layers of alternating conductivity types (e.g., pnpnpn structure, 5 layer bidirectional diacs, etc.):

(under subclass 109) Subject matter wherein the two terminal device with no control electrode has more than four layers of semiconductor material, each layer having an electrical conductivity type (e.g., p-type or n-type) which differs from that of each adjacent layer.