US PATENT SUBCLASS 257 / 112
.~.~ With highly-doped breakdown diode trigger

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
109  DF  .~ Having only two terminals and no control electrode (gate) (e.g., Shockley diode) {3}
112.~.~ With highly-doped breakdown diode trigger

DEFINITION

Classification: 257/112

With highly-doped breakdown diode trigger:

(under subclass 109) Subject matter wherein the two terminal device with no control electrode includes a diode portion which is heavily doped to decrease its breakdown voltage to trigger the device into operation.