US PATENT SUBCLASS 257 / 168
.~ With means to increase breakdown voltage

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
168.~ With means to increase breakdown voltage {2}
169  DF  .~.~> High resistivity base layer
170  DF  .~.~> Surface feature (e.g., guard ring, groove, mesa) {1}

DEFINITION

Classification: 257/168

With means to increase breakdown voltage:

(under subclass 107) Subject matter wherein the regenerative active junction type switching device includes means to increase the reverse voltage which the device can sustain without breaking down.