US PATENT SUBCLASS 257 / 169
.~.~ High resistivity base layer

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
168  DF  .~ With means to increase breakdown voltage {2}
169.~.~ High resistivity base layer

DEFINITION

Classification: 257/169

High resistivity base layer:

(under subclass 168) Subject matter wherein the means for increasing breakdown voltage includes a base (as contrasted with emitter or collector) layer which has a relatively high electrical resistivity.