US PATENT SUBCLASS 257 / 157
.~ With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

107  DF  REGENERATIVE TYPE SWITCHING DEVICE (E.G., SCR, COMFET, THYRISTOR) {19}
157.~ With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.) {4}
158  DF  .~.~> Three or more amplification stages
159  DF  .~.~> Transistor as amplifier
160  DF  .~.~> With distributed amplified current
161  DF  .~.~> With a turn-off diode

DEFINITION

Classification: 257/157

With integrated trigger signal amplification means (e.g., amplified gate, "pilot thyristor", etc.):

(under subclass 107) Subject matter wherein the regenerative switching device has means to amplify the control current of the device, which is physically integrated with the regenerative switching device.

SEE OR SEARCH THIS CLASS, SUBCLASS:

115, for light activated regenerative devices with trigger signal amplification.

123, for bidirectional regenerative devices with trigger signal amplification.

SEE OR SEARCH CLASS

330, Amplifiers,

250+, for semiconductor amplifying devices (e.g.,

transistors