257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
79 | | INCOHERENT LIGHT EMITTER STRUCTURE {10} |
80 | DF | .~> In combination with or also constituting light responsive device {3} |
86 | DF | .~> Active layer of indirect band gap semiconductor {1} |
88 | DF | .~> Plural light emitting devices (e.g., matrix, 7-segment array) {4} |
94 | DF | .~> With heterojunction {2} |
98 | DF | .~> With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package |
99 | DF | .~> With housing or contact structure |
100 | DF | .~> Encapsulated |
101 | DF | .~> With particular dopant concentration or concentration profile (e.g., graded junction) |
102 | DF | .~> With particular dopant material (e.g., Zinc as dopant in GaAs) |
103 | DF | .~> With particular semiconductor material |