| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
|
| 79 |  | INCOHERENT LIGHT EMITTER STRUCTURE {10} |
| 80 | DF | .~> In combination with or also constituting light responsive device {3} |
| 86 | DF | .~> Active layer of indirect band gap semiconductor {1} |
| 88 | DF | .~> Plural light emitting devices (e.g., matrix, 7-segment array) {4} |
| 94 | DF | .~> With heterojunction {2} |
| 98 | DF | .~> With reflector, opaque mask, or optical element (e.g., lens, optical fiber, index of refraction matching layer, luminescent material layer, filter) integral with device or device enclosure or package |
| 99 | DF | .~> With housing or contact structure |
| 100 | DF | .~> Encapsulated |
| 101 | DF | .~> With particular dopant concentration or concentration profile (e.g., graded junction) |
| 102 | DF | .~> With particular dopant material (e.g., Zinc as dopant in GaAs) |
| 103 | DF | .~> With particular semiconductor material |