US PATENT SUBCLASS 257 / 86
.~ Active layer of indirect band gap semiconductor

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

79  DF  INCOHERENT LIGHT EMITTER STRUCTURE {10}
86.~ Active layer of indirect band gap semiconductor {1}
87  DF  .~.~> With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP)

DEFINITION

Classification: 257/86

Active layer of indirect band gap semiconductor:

(under subclass 79) Subject matter wherein the light emitting active region is in or between semiconductor materials in which direct transitions of electrons from conduction to valance bands do not take place.

(1) Note. Transitions may take place in steps due to trapping levels located in the forbidden band between the conduction and valance bands.