US PATENT SUBCLASS 257 / 87
.~.~ With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

79  DF  INCOHERENT LIGHT EMITTER STRUCTURE {10}
86  DF  .~ Active layer of indirect band gap semiconductor {1}
87.~.~ With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP)

DEFINITION

Classification: 257/87

With means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in GaP):

(under subclass 86) Subject matter wherein the light emitting active region with an indirect band gap layer has means to facilitate electron-hole recombination (e.g., isoelectronic traps such as nitrogen in gallium phosphide).