US PATENT SUBCLASS 257 / 101
.~ With particular dopant concentration or concentration profile (e.g., graded junction)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

79  DF  INCOHERENT LIGHT EMITTER STRUCTURE {10}
101.~ With particular dopant concentration or concentration profile (e.g., graded junction)

DEFINITION

Classification: 257/101

With particular dopant concentration or concentration profile (e.g., graded junction):

(under subclass 79) Subject matter wherein the light emitting active junction has a particular concentration of dopant ions or profile in a given direction or cross sectional area or volume.