US PATENT SUBCLASS 257 / 102
.~ With particular dopant material (e.g., Zinc as dopant in GaAs)

Current as of: June, 1999
Click HD for Main Headings
Click for All Classes

Internet Version by PATENTEC © 1999      Terms of Use


257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

79  DF  INCOHERENT LIGHT EMITTER STRUCTURE {10}
102.~ With particular dopant material (e.g., Zinc as dopant in GaAs)

DEFINITION

Classification: 257/102

With particular dopant material (e.g., zinc as dopant in GaAs):

(under subclass 79) Subject matter wherein the dopant material of the active junction is specified.