| 257 / | HD | ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES) |
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| 487 |  | WITH MEANS TO INCREASE BREAKDOWN VOLTAGE THRESHOLD {6} |
| 488 | DF | .~> Field relief electrode {2} |
| 491 | DF | .~> In integrated circuit {1} |
| 493 | DF | .~> With electric field controlling semiconductor layer having a low enough doping level in relationship to its thickness to be fully depleted prior to avalanche breakdown (e.g., RESURF devices) |
| 494 | DF | .~> Reverse-biased pn junction guard region |
| 495 | DF | .~> Floating pn junction guard region |
| 496 | DF | .~> With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.) |