US PATENT SUBCLASS 257 / 496
.~ With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.)


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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

487  DF  WITH MEANS TO INCREASE BREAKDOWN VOLTAGE THRESHOLD {6}
496.~ With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.)


DEFINITION

Classification: 257/496

With physical configuration of semiconductor surface to reduce electric field (e.g., reverse bevels, double bevels, stepped mesas, etc.):

(under subclass 487) Subject matter wherein the means to increase breakdown voltage includes a semiconductor surface portion having a physical configuration, such as a bevel or mesa, to reduce electric field strength at a given applied voltage. Typically, the physical configuration will be such that the depletion region from a reverse biased junction in the active device reaches the physically configured surface and is forced by the shape of the surface to spread wider at a given applied reverse voltage than it would otherwise, thus reducing the electric field strength in the depletion layer.