US PATENT SUBCLASS 257 / 618
PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

618PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.) {6}
619  DF  .~> With thin active central semiconductor portion surrounded by thicker inactive shoulder (e.g., for mechanical support)
620  DF  .~> With peripheral feature due to separation of smaller semiconductor chip from larger wafer (e.g., scribe region, or means to prevent edge effects such as leakage current at peripheral chip separation area)
621  DF  .~> With electrical contact in hole in semiconductor (e.g., lead extends through semiconductor body)
622  DF  .~> Groove
623  DF  .~> Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper) {3}
627  DF  .~> With specified crystal plane or axis {1}

DEFINITION

Classification: 257/618

PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.):

(under the class definition) Subject matter wherein the device has a particular physical form, such as a mesa or bevel or groove.

SEE OR SEARCH THIS CLASS, SUBCLASS:

171, for regenerative devices with edge features (e.g., bevels).

496, for devices with physical configuration (e.g., bevels) to increase breakdown voltage threshold.

586, for bipolar transistor devices with non-planar semiconductor surfaces (e.g., bevels).