US PATENT SUBCLASS 257 / 623
.~ Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

618  DF  PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.) {6}
623.~ Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper) {3}
624  DF  .~.~> With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode)
625  DF  .~.~> Semiconductor body including mesa is intimately bonded to thick electrical and/or thermal conductor member of larger lateral extent than semiconductor body (e.g., "plated heat sink" microwave diode)
626  DF  .~.~> Combined with passivating coating

DEFINITION

Classification: 257/623

Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper):

(under subclass 618) Subject matter wherein the physical configuration is that of a mesa (e.g., there is at least one flat topped protrusion above the rest of the surface of the semiconductor body).

SEE OR SEARCH THIS CLASS, SUBCLASS:

170, for regenerative devices with mesa structure.

452, and 466, for light responsive devices with mesa structure.

571, for bipolar transistors with mesa structure.

600, for voltage variable capacitance active solid-state devices with mesa structure.