US PATENT SUBCLASS 257 / 624
.~.~ With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

618  DF  PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.) {6}
623  DF  .~ Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper) {3}
624.~.~ With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode)

DEFINITION

Classification: 257/624

With low resistance ohmic connection means along exposed mesa edge (e.g., contact or heavily doped region along exposed mesa to reduce "skin effect" losses in microwave diode):

(under subclass 623) Subject matter wherein there is a low resistance ohmic connection means along the exposed edge of the mesa.