US PATENT SUBCLASS 257 / 625
.~.~ Semiconductor body including mesa is intimately bonded to thick electrical and/or thermal conductor member of larger lateral extent than semiconductor body (e.g., "plated heat sink" microwave diode)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

618  DF  PHYSICAL CONFIGURATION OF SEMICONDUCTOR (E.G., MESA, BEVEL, GROOVE, ETC.) {6}
623  DF  .~ Mesa structure (e.g., including undercut or stepped mesa configuration or having constant slope taper) {3}
625.~.~ Semiconductor body including mesa is intimately bonded to thick electrical and/or thermal conductor member of larger lateral extent than semiconductor body (e.g., "plated heat sink" microwave diode)

DEFINITION

Classification: 257/625

Semiconductor body including mesa is intimately bonded to thick electrical and/or thermal conductor member of larger lateral extent than semiconductor body (e.g., "plated heat sink" microwave diode):

(under subclass 623) Subject matter wherein the mesa semiconductor body is intimately bonded (e.g., by electroplating the semiconductor with a thick metal layer) to a thick electrical and/or thermal conductor member of larger lateral extent than the semiconductor body.