(under subclass 618) Subject matter in which there is a physical groove in a surface of the semiconductor device.
SEE OR SEARCH THIS CLASS, SUBCLASS:
117, and 118, for light activated regenerative type devices having a groove, e.g., that contains a light conductor.
127, for a bidirectional rectifier with control electrode and a groove or guard ring to separate the device into sections having different conductive polarity.
170, for a regenerative type device with a groove or other surface feature to increase breakdown voltage.
244, for a charge transfer device having a groove.
283, for a JFET with Schottky gate closely aligned with source region with a groove or overhang for alignment.
284, for a JFET with Schottky gate in a groove. 330, through 334, for a short channel IGFET with a gate electrode in a groove for controlling a vertical portion of the device channel.
397, for an IGFET in an integrated circuit with a thick insulator portion recessed in a vertical walled groove in the semiconductor surface to prevent parasitic conduction channels.
466, for a light responsive device with a physical configuration feature (e.g., a groove).
534, for a passive component located in a groove in an integrated circuit device.
571, for Darlington configuration bipolar transistor structure having a nonplanar structure (e.g., a groove).
586, for a bipolar transistor structure with a nonplanar surface (e.g., a groove).
589, for a voltage variable capacitance device with means to increase active junction area (e.g., a groove).
