US PATENT SUBCLASS 257 / 471
SCHOTTKY BARRIER

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

471SCHOTTKY BARRIER {8}
472  DF  .~> To compound semiconductor {1}
474  DF  .~> As active junction in bipolar transistor (e.g., Schottky collector)
475  DF  .~> With doping profile to adjust barrier height
476  DF  .~> In integrated structure {1}
480  DF  .~> In voltage variable capacitance diode
481  DF  .~> Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts) {1}
483  DF  .~> With means to prevent edge breakdown {1}
485  DF  .~> Specified materials {1}

DEFINITION

Classification: 257/471

SCHOTTKY BARRIER:

(under the class definition) Subject matter wherein the device contains a Schottky barrier (i.e., a rectifying interface between a semiconductor material and a metal).

SEE OR SEARCH THIS CLASS, SUBCLASS:

54, for Schottky barrier to amorphous semiconductor material device.

73, for Schottky barrier to polycrystalline semiconductor material device.

155, for a regenerative type switching device with switching speed enhancement means (e.g., a Schottky contact).

260, for JFET having the same channel controlled by, for example, Schottky barrier and PN junction gates.

280, through 284, for JFETs with a Schottky gate electrode.

449, through 457, for a light responsive device with a Schottky barrier. 928, for a shorted pn or Schottky junction device.

SEE OR SEARCH CLASS

438, Semiconductor Device Manufacturing: Process, particularly

570+, for methods of forming a rectifying (Schottky) contact to a semiconductor.