US PATENT SUBCLASS 257 / 481
.~ Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts)

Current as of: June, 1999
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257 /   HD   ACTIVE SOLID-STATE DEVICES (E.G., TRANSISTORS, SOLID-STATE DIODES)

471  DF  SCHOTTKY BARRIER {8}
481.~ Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts) {1}
482  DF  .~.~> Microwave transit time device (e.g., IMPATT diode)

DEFINITION

Classification: 257/481

Avalanche diode (e.g., so-called "Zener" diode having breakdown voltage greater than 6 volts):

(under subclass 471) Subject matter wherein the Schottky barrier is in a device designed to operate in avalanche breakdown.

SEE OR SEARCH THIS CLASS, SUBCLASS:

199, for an avalanche diode in a non-charge transfer device having a heterojunction.

551, for an avalanche diode used as a voltage reference element combined with pn junction isolation means in an integrated circuit.

603, through 606, for avalanche diodes not classified above those subclasses in this schedule, i.e., not involving a heterojunction in a non-charge transfer device, or a Schottky barrier, or one used as a voltage reference element with pn

junction isolation means in an integrated circuit.